英语翻译Whisker formation occurred only under very specific process conditions that produced a high etch selectivity at the dislocations.We have previously reported whisker formation in narrow window of solution concentration (0.01–0.04 M KOH)

英语翻译Whisker formation occurred only under very specific process conditions that produced a high etch selectivity at the dislocations.We have previously reported whisker formation in narrow window of solution concentration (0.01–0.04 M KOH)
英语翻译
Whisker formation occurred only under very specific process conditions that produced a high etch selectivity at the dislocations.We have previously reported whisker formation in narrow window of solution concentration (0.01–0.04 M KOH) for unstirred solutions.5 Stirring the solution during etching provided more controllable process conditions by enabling whisker formation over a wider range of solution concentration (compared to unstirred solutions).When using stirred solutions,selective etching occurred for concentrations of 0.001–0.01 M KOH.Note that these solutions are significantly more dilute than for the unstirred case.The solution concentrations that enable the selective etching of dislocations appear to correspond to moderately diffusion-limited etching conditions.Decreasing the solution concentration further resulted in a strongly diffusion-limited etch process and a smooth etched surface morphology free of whiskers.

英语翻译Whisker formation occurred only under very specific process conditions that produced a high etch selectivity at the dislocations.We have previously reported whisker formation in narrow window of solution concentration (0.01–0.04 M KOH)
Whisker formation occurred only under very specific process conditions that produced a high etch selectivity at the dislocations.We have previously reported whisker formation in narrow window of solution concentration (0.01–0.04 M KOH) for unstirred solutions.
晶须的形成只有处于很具体的工艺条件下在位错产生高腐蚀选择性时才会发生.我们以前曾经报导过在未搅拌的,浓度在0.01–0.04 M KOH之间的溶液的窄窗口有晶须形成.
5 Stirring the solution during etching provided more controllable process conditions by enabling whisker formation over a wider range of solution concentration (compared to unstirred solutions).
When using stirred solutions,selective etching occurred for concentrations of 0.001–0.01 M KOH.Note that these solutions are significantly more dilute than for the unstirred case.
5.在腐蚀过程搅拌溶液可以促使晶须在更宽广的溶液浓度范围形成（与未搅拌溶液相对比）,这样可以提供更多可控的工艺条件.使用浓度在0.001–0.01 M KOH之间的搅拌溶液可以产生选择性腐蚀.要注意的是这些溶液要比未搅拌溶液的浓度显著地更稀释.
The solution concentrations that enable the selective etching of dislocations appear to correspond to moderately diffusion-limited etching conditions.Decreasing the solution concentration further resulted in a strongly diffusion-limited etch process and a smooth etched surface morphology free of whiskers.
促使位错的选择性腐蚀的溶液浓度似乎与中等扩散限制的腐蚀条件相对应.进一步降低溶液浓度的结果是一个强性扩散限制的腐蚀过程以及一个没有晶须的平滑表面形貌.
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仅在非常发生晶形成特定的工艺条件下,高选择性产生蚀刻在脱臼。我们先前已经报道的晶须在狭窄的窗户形成溶液浓度(0.01 - -0.04米的KOH)为unstirred解决方案。在搅拌溶液蚀刻5提供了更多的可控条件下形成过程使晶须在一个广泛的溶液浓度比unstirred解决方案)。当使用搅拌方案、选择性腐蚀腕高低...

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仅在非常发生晶形成特定的工艺条件下,高选择性产生蚀刻在脱臼。我们先前已经报道的晶须在狭窄的窗户形成溶液浓度(0.01 - -0.04米的KOH)为unstirred解决方案。在搅拌溶液蚀刻5提供了更多的可控条件下形成过程使晶须在一个广泛的溶液浓度比unstirred解决方案)。当使用搅拌方案、选择性腐蚀腕高低

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你把单词都查好啊。不然也太没诚意了，你等的时间都够查完单词的了。