英语翻译Our experiments were performed in a two-chamber MBE system,equipped with elemental sources of Zn,Cd and Se in the II-VI chamber and Ga and As in the III-V chamber.The growth process was continuously controlled by reflection high-energy el
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英语翻译Our experiments were performed in a two-chamber MBE system,equipped with elemental sources of Zn,Cd and Se in the II-VI chamber and Ga and As in the III-V chamber.The growth process was continuously controlled by reflection high-energy el
英语翻译
Our experiments were performed in a two-chamber MBE system,equipped with elemental sources of Zn,Cd and Se in the II-VI chamber and Ga and As in the III-V chamber.The growth process was continuously controlled by reflection high-energy electron diffraction (RHEED).The ZnSe-buffer layers of 45nm were grown on exactly (0 0 1) oriented GaAs substrates at a substrate temperature of about 3050C.The CdSe was grown at 2650C and 3400C,respectively.The transmission electron microscopy (TEM) investigations were performed with a Philips CM 200 FEG/ST microscope with an electron energy of 200 keV.The island density was analysed using plan-view samples.Conventional and high-resolution cross-section TEM combined with the chemical evaluation of lattice fringe images (CELFA) techniques [7,8]
were carried out to determine the Cd-distribution at the ZnSe-CdSe-ZnSe interface.The investigations of the optical gain have been performed in the edge geometry using a pulsed dye laser pumped by an excimer laser.The gain spectra were evaluated using the variable-stripe-length method [9].
英语翻译Our experiments were performed in a two-chamber MBE system,equipped with elemental sources of Zn,Cd and Se in the II-VI chamber and Ga and As in the III-V chamber.The growth process was continuously controlled by reflection high-energy el
多给几个作参考吧
google
我们的实验,在两院分子束外延系统,锌,镉,硒元素的来源在第二至第六室和Ga和As在III - V族室配备.不断的成长过程控制反射高能电子衍射(RHEED).45纳米的硒化锌缓冲层之成长,正是(0 0 1)面向砷化镓基板温度在基板约3050C.种植的硒化镉在2650C和3400C分别.透射电子显微镜(TEM)进行调查与飞利浦中医200护送队/意法半导体与电子能量为200千电子伏显微镜.岛上使用计划密度进行了分析,认为样品.常规和高清晰度截面透射电镜与晶格边缘图像(CELFA)化学评价相结合的技术[7,8]
yahoo宝贝鱼
我们的实验在一个两议院的MBE系统执行了,装备用锌、在II-VI房间和Ga的Cd和Se的自然力来源和在III-V房间.成长过程连续地是由反射高能的电子衍射(RHEED)控制的.45nm ZnSe缓冲层数在正确地增长(0 0 1)大约安置了GaAs基体在基体温度3050C.CdSe增长在2650C和3400C,分别.透射电镜术(TEM)调查进行了与与200 keV电子能量的一个Philips CM 200 FEG/ST显微镜.使用计划看法样品,海岛密度被分析了.常规和高分辨的短剖面TEM与格子边缘图象(CELFA)技术结合了[7,8的]化工评估
有道
我们的实验中产生的两院制勋章系统,配备元素来源的锌、Cd、硒的II-VI室和遗传算法与iii - v族室.不断增长的过程控制RHEED高能电子衍射(反思).这个ZnSe-buffer层45纳米种植在完全(0 0(1)在衬底材料以衬底温度约3050C.这个CdSe生长在2650C和3400C,分别.在透射电子显微镜(TEM)进行了调查与飞利浦厘米/圣FEG 200对一个电子显微镜的能量的200凯文不可能不.这个岛是用轻原子样品分析密度.传统的和高分辨率的截面TEM结合化学评价的边缘图像(CELFA网格技术[7、8]
嗯,貌似还是google的好些
我们的实验,在两院分子束外延系统,锌,镉,硒元素的来源在第二至第六室和Ga和As在III - V族室配备。不断的成长过程控制反射高能电子衍射(RHEED)。 45纳米的硒化锌缓冲层之成长,正是(0 0 1)面向砷化镓基板温度在基板约3050C。种植的硒化镉在2650C和3400C分别。透射电子显微镜(TEM)进行调查与飞利浦中医200护送队/意法半导体与电子能量为200千电子伏显微镜。岛上使用计划...
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我们的实验,在两院分子束外延系统,锌,镉,硒元素的来源在第二至第六室和Ga和As在III - V族室配备。不断的成长过程控制反射高能电子衍射(RHEED)。 45纳米的硒化锌缓冲层之成长,正是(0 0 1)面向砷化镓基板温度在基板约3050C。种植的硒化镉在2650C和3400C分别。透射电子显微镜(TEM)进行调查与飞利浦中医200护送队/意法半导体与电子能量为200千电子伏显微镜。岛上使用计划密度进行了分析,认为样品。常规和高清晰度截面透射电镜与晶格边缘图像(CELFA)化学评价技术[7,8]进行,以确定在硒化锌,硒化镉,硒化锌接口的CD -分配相结合。的光学增益的调查已经进行了边缘几何使用脉冲染料激光器准分子激光泵浦的。增益谱进行了评价使用可变条长度的方法[9]。
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