英语翻译Fig.7 shows 3D images and surface roughness of the Siwafer by AFM to compare the unimplanted with implanted surface.Roughness of Si-wafer before N+ ion implantation is about 6 Å while it reduced to about 3 Å after implantation
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英语翻译Fig.7 shows 3D images and surface roughness of the Siwafer by AFM to compare the unimplanted with implanted surface.Roughness of Si-wafer before N+ ion implantation is about 6 Å while it reduced to about 3 Å after implantation
英语翻译
Fig.7 shows 3D images and surface roughness of the Siwafer by AFM to compare the unimplanted with implanted surface.Roughness of Si-wafer before N+ ion implantation is about 6 Å while it reduced to about 3 Å after implantation.The lowest surface roughness was obtained on the sample implanted with 1×1017 N cm−2 dose.This result means that the nitrogen ion implantation by PSII causes surface morphology change together with improvement in mechanical properties of trivalent chromium surface.
PSII:等离子体源离子注入
英语翻译Fig.7 shows 3D images and surface roughness of the Siwafer by AFM to compare the unimplanted with implanted surface.Roughness of Si-wafer before N+ ion implantation is about 6 Å while it reduced to about 3 Å after implantation
图7显示的是原子力显微镜下硅片在注入氮离子前后的三维立体和表面粗糙维度对比.在氮离子注入前的表面粗糙度是6 Å,而在植入后则缩减为3 Å.最底层的粗糙度是对样本植入了1×1017 N平方厘米的剂量后取得的.这种结果表明:通过等离子体源离子注入的氮离子会引起表面结构形态的变化,同时对三价铬表面的机械性能得以改善.
图。 7显示了原子力显微镜三维成像和表面粗糙度的Siwafer比较unimplanted植入表面。粗糙度的硅晶片前ñ +离子注入约六时,而它植入后减少约3 Å。最低表面粗糙度得到与1 × 1017 ñ厘米- 2注入剂量的样品。这一结果意味着,通过私人秘书氮离子注入的原因,在三价铬的表面力学性能的改善表面形态的变化在一起。...
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图。 7显示了原子力显微镜三维成像和表面粗糙度的Siwafer比较unimplanted植入表面。粗糙度的硅晶片前ñ +离子注入约六时,而它植入后减少约3 Å。最低表面粗糙度得到与1 × 1017 ñ厘米- 2注入剂量的样品。这一结果意味着,通过私人秘书氮离子注入的原因,在三价铬的表面力学性能的改善表面形态的变化在一起。
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