请材料英语方面的大神帮忙翻译hole/electron transport can be controlled by band offset minimization through the alignment of valence bands between the host PbS and the embedded second phases, MS (M ¼ Cd, Zn, Ca and Sr). This approach

请材料英语方面的大神帮忙翻译hole/electron transport can be controlled by band offset minimization through the alignment of valence bands between the host PbS and the embedded second phases, MS (M ¼ Cd, Zn, Ca and Sr). This approach
请材料英语方面的大神帮忙翻译
hole/electron transport can be controlled by band offset minimization through the alignment of valence bands between the host PbS and the embedded second phases, MS (M ¼ Cd, Zn, Ca and Sr). This approach gave the highest ZT value of 1.3 at 923 K for p-type Pb0.975Na0.025S–3%CdS.15 The superior ZT of the CdS containing samples comes from a high hole carrier mobility.
The effect of the second phases on both the electron (n-type) and hole (p-type) mobilities in PbS with CdS, ZnS, CaS and SrS is shown in Fig. 11(a). For n-type PbS the electron mobility values
at room temperature are signicantly reduced. The level of mobility reduction is almost the same regardless of the metal sulfides. This is explained by the relatively strong scattering of electrons in the conduction band of PbS because of the large conduction band offsets (misalignment) between the two phases. This is supported by DFT calculations of the energy barriers which are in the order of >0.5 eV between the conduction bands of PbS and those of the metal suldes.15,54 Relative to PbS, the
respective conduction band energy differences are 0.54 eV,

请材料英语方面的大神帮忙翻译hole/electron transport can be controlled by band offset minimization through the alignment of valence bands between the host PbS and the embedded second phases, MS (M ¼ Cd, Zn, Ca and Sr). This approach
空穴/电子输运可以通过主PbS和埋置的第二相（MS（M¼Cd,Zn,Ca和Sr））之间的价带的对准使价带偏移最小化来加以控制.这种方法对于p型Pb0.975Na0.025S-3％CdS.[15]来说zai1923K下给出了1.3的最高ZT.含 CdS样品优异的ZT来自于高的空穴载流子迁移率.第二相对含有CdS,Zns,CaShe,SrS的PbS中的电子（n型）和空穴（p型）两者迁移率的影响示于图11（a）.对于n型PbS来说在室温下的电子迁移率明显降低.迁移率降低的水平不管金属硫化物怎样,几乎是相同的.这可以得到能量屏障的DFT计算的支持,这在PbS和那些金属硫化物的导带之间大约是>0.5电子伏特的数量级.[15,54]相对于PbS,相应的导带的能量差是0.54电子伏特.

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